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onsemi 2SA2039-TL-E BJTs - Bipolar Transistors BIP PNP 5A 50V

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Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 360 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 5 A, 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 255 mV

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