onsemi 2N6045G Darlington Transistors 8A 100V Bipolar Power NPN

Width: 4.83 mm

Height: 15.75 mm

Length: 10.53 mm

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

DC Current Gain hFE Max: 20000

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 1000

Maximum Collector Cut-off Current: 20 uA

Collector- Emitter Voltage VCEO Max: 100 V