onsemi 1SS383T1G Schottky Barrier Diode
Manufactureronsemi(View more products from this manufacturer)
Model1SS383T1G
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Speed: Fast Recovery =< 500ns > 200mA(Io)
Diode type: Schottky
Mounting Type: Surface Mount
Diode Configuration: 2Independence
Average rectified current: 0.3A
Operating temperature range: -55 to 150C
Spannung – DC Reverse Vr Max: 40V
Spannung – Vorwärts (Vf) Max: 600mV@100mA
Current - Average Rectified Io per Diode: 300mA(DC)
Current - Reverse Leakage with Vr Applied: 5uA@40V
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