NXP PHT8N06LT,135 Power MOSFET
ManufacturerNXP(View more products from this manufacturer)
ModelPHT8N06LT,135
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Type: Power MOSFET
Vgs(th): 2 V
Vgs (Max): 13V
Gate Charge (Qg): 11.2nC
Power consumption: 1.8|8.3W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 55V
Continuous drain current: 3.5A
Input Capacitance (Ciss): 650pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 80mOhm
Drive Voltage (Max Rds On, Min Rds On): 5V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts