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NXP PDTA144EE,115 Pre-Biased Bipolar Transistor

ModelPDTA144EE,115
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Mounting Type: Surface Mount

Power-Maximum: 150mW

Transistor type: PNP-Prebias

Resistance-Base (R1): 47kOhms

Vce Saturation (maximum): 150mV@500uA,10mA

Resistance-Emitter base (R2): 47kOhms

DC current gain (hFE) (minimum): 80@5mA,5V

Current-Collector (Ic) (maximum): 100mA

Current-Collector cutoff (maximum): 100nA(ICBO)

Voltage-Collector-emitter breakdown (maximum): 50V

Datasheet


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