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NXP BFU730LXZ RF Bipolar Transistors SiGe:C MMIC Transistor

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Technology: SiGe

Unit Weight: 0.634 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 53 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 160 mW

Emitter- Base Voltage VEBO: 1.3 V

Continuous Collector Current: 5 mA

Maximum DC Collector Current: 30 mA

Maximum Operating Temperature: + 125 C

DC Collector/Base Gain hfe Min: 205

Collector- Emitter Voltage VCEO Max: 3 V

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