Nexperia PMST6429,115 BJTs - Bipolar Transistors 60 V, 500 mA NPN general-purpose transistor

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 60 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 500 at 10 uA, 5 V

Gain Bandwidth Product fT: 700 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 55 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 500 at 10 uA, 5 V, 500 at 100 uA, 5 V, 500 at 1 mA, 5 V, 500 at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V