Nexperia PMP5201V,115 BJTs - Bipolar Transistors 45 V, 100 mA PNP/PNP matched double transistor

Width: 1.3 mm

Height: 0.6 mm

Length: 1.7 mm

Technology: Si

Unit Weight: 2.700 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 200 at 2 mA, 5 V

Gain Bandwidth Product fT: 175 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 200 mV