Nexperia PBSS4140DPN,115 BJTs - Bipolar Transistors 40 V low VCEsat NPN/PNP transistor

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 20 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 300 at 500 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 500 mA, 5 V at NPN, 200 at 1 A, 5 V at NPN, 300 at 100 mA, 5 V at PNP, 250 at 500 mA, 5 V at PNP

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 500 mV