Nexperia PBSS4041NX,115 BJTs - Bipolar Transistors 60 V, 6.2 A NPN low VCEsat transistor

Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 6.2 A

Maximum DC Collector Current: 6.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 150 mV