For full functionality of this site it is necessary to enable JavaScript.
EMIN.MY
0
Product image

Nexperia BSS87,115 MOSFETs NPN high-voltage transistors

Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available

Technology: Si

Unit Weight: 130.500 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 10 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 400 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 2.8 V

Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts