Microsemi Jantx2N3810U/TR BJTs - Bipolar Transistors 60V 50mA 350mW Dual Small-Signal BJT SQ SMT TR
ManufacturerMicrosemi(View more products from this manufacturer)
ModelJantx2N3810U/TR
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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 450 at 100 uA, 5 V
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 100 at 10 uA, 5 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 200 mV
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