Microsemi Jantx2N2906A BJTs - Bipolar Transistors 40V 600mA 400mW PNP Small-Signal BJT THT
ManufacturerMicrosemi(View more products from this manufacturer)
ModelJantx2N2906A
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 175 at 1 mA, 10 VDC
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 40 at 1 mA, 10 VDC
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 400 mV
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