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Microsemi JANSF2N3634UB BJTs - Bipolar Transistors 140V RH Small-Signal BJT

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 600 mV

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