Microsemi JANS2N5796U/TR BJTs - Bipolar Transistors Dual Small-Signal BJT
ManufacturerMicrosemi(View more products from this manufacturer)
ModelJANS2N5796U/TR
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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 5 W
DC Current Gain hFE Max: 300 at 150 mA, 10 V
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 600 mW
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 1.6 V
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