Microsemi JANS2N2222AUB/TR BJTs - Bipolar Transistors 40V 800mA 500mW 3 Pin CER Small-Signal BJT TR
ManufacturerMicrosemi(View more products from this manufacturer)
ModelJANS2N2222AUB/TR
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 325 at 1 mA, 10 V
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 75 V
Maximum DC Collector Current: 800 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 30 at 500 mA, 10 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 300 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts