Microsemi Jan2N3584 BJTs - Bipolar Transistors Power BJT
ManufacturerMicrosemi(View more products from this manufacturer)
ModelJan2N3584
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 35 W
DC Current Gain hFE Max: 100
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 375 V
Continuous Collector Current: 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 25
Collector- Emitter Voltage VCEO Max: 250 V
Collector-Emitter Saturation Voltage: 750 mV
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