Microsemi JAN2N3501UB/TR BJTs - Bipolar Transistors 150V 300mA 1W NPN 3 Pin CER Small-Signal BJT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 300 at 150 mA, 10 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 300 mA, 10 V

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 400 mV