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Microsemi APT47N65BC3G Power MOSFET

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Type: Power MOSFET

Vgs(th): 3.9 V

Vgs (Max): 20V

Gate Charge (Qg): 260nC

Power consumption: 417W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 650V

Continuous drain current: 47A

Input Capacitance (Ciss): 7015pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 70mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet


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