For full functionality of this site it is necessary to enable JavaScript.
EMIN.MY
0
Product image

Microsemi APT18M80S MOSFET

Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 120nC

Power consumption: 500W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 800V

Continuous drain current: 19A

Input Capacitance (Ciss): 3760pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 530mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet


Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts