Microchip Technology TN5325N8-G FET 250V 7Ohm

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Fall Time: 15 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 52.800 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 316 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7 Ohms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 600 mV