Microchip Technology MX2N5115 JFET JFET

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Gate-Source Cutoff Voltage: 6 V

Maximum Drain Gate Voltage: 30 V

Drain-Source Current at Vgs=0: - 60 mA

Id - Continuous Drain Current: - 1 nA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 100 Ohms

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: 30 V