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Microchip Technology MX2N5114UB JFETs JFET

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Technology: Si

Mounting Style: SMD/SMT

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Gate-Source Cutoff Voltage: 10 V

Maximum Drain Gate Voltage: 30 V

Drain-Source Current at Vgs=0: - 90 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 75 Ohms

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: - 1.3 V

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