Microchip Technology MSCSM120VR1M11CT6AG MOSFET / SiC SBD PM-MOSFET-SIC-SBD-SP6C

Technology: SiC

Mounting Style: Screw Mount

Vf - Forward Voltage: 1.8 V

Vr - Reverse Voltage: 1.7 kV

Pd - Power Dissipation: 1.042 kW

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Id - Continuous Drain Current: 251 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 10.4 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.8 V