Microchip Technology MSC017SMA120B SiC MOSFET Modules MOSFET SIC 1200 V 17 mOhm TO-247

Fall Time: 18 ns

Rise Time: 13 ns

Technology: SiC

Configuration: Single

Mounting Style: Through Hole

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 455 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 29 ns

Typical Turn-Off Delay Time: 51 ns

Id - Continuous Drain Current: 113 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 22 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.7 V