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Microchip Technology MQ2N4858 JFET JFET

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: 4 VDC

Maximum Drain Gate Voltage: 30 V

Drain-Source Current at Vgs=0: 5 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 60 Ohms

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: 30 V

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