Microchip Technology DRF1200 High-Side, Low-Side RF MOSFET (VDMOS) Driver Hybrid 1000 V 1000 W 30 MHz T2B
ModelDRF1200
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Width: 1 mm
Height: 0.3 mm
Length: 1.5 mm
Fall Time: 2.5 ns
Rise Time: 2.5 ns
Technology: Si
Unit Weight: 48 g
Configuration: Inverting, Non-Inverting
Pd - Power Dissipation: 624 W
Rds On - Drain-Source Resistance: 900 mOhms
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