Microchip Technology ARF466BG RF Power MOSFET RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264

Gain: 16 dB

Technology: Si

Unit Weight: 38 g

Output Power: 300 W

Mounting Style: Through Hole

Number of Channels: 1 Channel

Operating Frequency: 45 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 357 W

Vgs - Gate-Source Voltage: + 30 V

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.3 mS

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 4 V