Microchip Technology ARF463AP1G RF Power MOSFET RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source

Gain: 15 dB

Fall Time: 4.2 ns

Rise Time: 4.3 ns

Technology: Si

Unit Weight: 38 g

Channel Mode: Enhancement

Output Power: 100 W

Mounting Style: Through Hole

Operating Frequency: 100 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 180 W

Vgs - Gate-Source Voltage: + 30 V

Operating Temperature Range: - 55 C to + 150 C

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 mS

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 5 V