Microchip Technology APTGX400A120D3G Power Modules PM-IGBT-TFS-D3
ModelAPTGX400A120D3G
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Configuration: Half Bridge
Mounting Style: Screw Mount
Pd - Power Dissipation: 1.293 kW
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 535 A
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts