Microchip Technology APTGT50A170TG IGBT Modules PM-IGBT-TFS-SP4
ModelAPTGT50A170TG
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Technology: Si
Unit Weight: 110 g
Configuration: Dual
Mounting Style: Screw Mount
Pd - Power Dissipation: 312 W
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 75 A
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