Microchip Technology APT80GP60B2G IGBT Modules IGBT PT MOS 7 Single 600 V 80 A TO-247 MAX
ModelAPT80GP60B2G
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 1.041 kW
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 100 A
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