Microchip Technology APT46GA90JD40 IGBT Modules IGBT PT MOS 8 Combi 900 V 46 A SOT-227

Width: 25.4 mm

Height: 9.6 mm

Length: 38.2 mm

Technology: Si

Unit Weight: 30 g

REACH - SVHC: Details

Mounting Style: Screw Mount

Pd - Power Dissipation: 284 W

Operating Temperature Range: - 55 C to + 150 C

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 87 A