Microchip Technology APT40GP60JDQ2 IGBT Modules IGBT PT MOS 7 Combi 600 V 40 A SOT-227
ModelAPT40GP60JDQ2
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 284 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 30 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 86 A
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