Microchip Technology APT35GT120JU3 IGBT Modules PM-IGBT-TFS-SOT227
ModelAPT35GT120JU3
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 260 W
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 55 A
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