Microchip Technology APT24M120B2 MOSFETs MOSFET MOS8 1200 V 24 A TO-247 MAX

Fall Time: 42 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 260 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.04 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 145 ns

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 27 S

Rds On - Drain-Source Resistance: 630 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V