Microchip Technology APT100GN120JDQ4 SiC IGBT Modules IGBT Fieldstop Low Frequency Combi 1200 V 100 A SOT-227
ModelAPT100GN120JDQ4
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Technology: SiC
Unit Weight: 29.200 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 446 W
Gate-Emitter Leakage Current: 600 nA
Maximum Gate Emitter Voltage: 30 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 153 A
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