Microchip Technology 2N5430 BJTs - Bipolar Transistors Power BJT
Model2N5430
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Technology: Si
Unit Weight: 8.025 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 40 W
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 7 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 700 mV
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