Microchip Technology 2N4913 BJTs - Bipolar Transistors Power BJT
Model2N4913
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 88 W
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 750 mV
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