Microchip Technology 2N3637UB/TR BJTs - Bipolar Transistors 175V 1A 1W 3 Pin CER Small-Signal BJT THT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 300 at - 50 mA, - 10 V

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 175 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 55 at 100 uA, 10 V

Collector- Emitter Voltage VCEO Max: 175 V

Collector-Emitter Saturation Voltage: 300 mV