Microchip Technology 2N3628 BJTs - Bipolar Transistors Power BJT
Model2N3628
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 7.5 W
Emitter- Base Voltage VEBO: 4 V
Collector- Base Voltage VCBO: 75 V
Continuous Collector Current: 5 A
Maximum DC Collector Current: 5 A
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 1.5 V
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