Microchip Technology 2N2946AUB/TR BJTs - Bipolar Transistors 35V 200mA 400mW Round-End Small-Signal BJT TR
Model2N2946AUB/TR
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 400 mW
Emitter- Base Voltage VEBO: 40 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 50 at - 1 mA, - 500 mV
Collector- Emitter Voltage VCEO Max: 40 V
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