Microchip Technology 2N2895 BJTs - Bipolar Transistors Power BJT
Model2N2895
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1.8 W
DC Current Gain hFE Max: 120
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 1 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 600 mV
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