Microchip Technology 2N1486 BJTs - Bipolar Transistors 55V 3A 1.75W NPN Power BJT THT

Technology: Si

Unit Weight: 47.095 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.75 W

DC Current Gain hFE Max: 100

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 35

Collector- Emitter Voltage VCEO Max: 55 V

Collector-Emitter Saturation Voltage: 750 mV