Micro Commercial Components (MCC) MIS80N120NT1YHE3-BP IGBT Modules IGBT 1200V 80A STO-220
ModelMIS80N120NT1YHE3-BP
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 735 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.65 V
Continuous Collector Current at 25 C: 145 A
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts