Micro Commercial Components (MCC) DTC114ESA-AP Pre-Biased Bipolar Transistor
ModelDTC114ESA-AP
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Mounting Type: Through Hole
Power-Maximum: 300mW
Transistor type: NPN-Prebias+Diode
Frequency-Transition: 250MHz
Resistance-Base (R1): 10kOhms
Vce Saturation (maximum): 300mV@500uA,10mA
Resistance-Emitter base (R2): 10kOhms
DC current gain (hFE) (minimum): 30@5mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts