For full functionality of this site it is necessary to enable JavaScript.
EMIN.MY
0
Product image

MACOM PTFB201402FC-V2-R0 RF Power MOSFET RF LDMOS FET

ModelPTFB201402FC-V2-R0
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available

Gain: 16 dB

Technology: Si

Output Power: 140 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 2.01 GHz to 2.025 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: 10 V

Maximum Operating Temperature: + 225 C

Rds On - Drain-Source Resistance: 300 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V

Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts