IXYS MKI50-12F7 IGBT Modules 50 Amps 1200V
ManufacturerIXYS(View more products from this manufacturer)
ModelMKI50-12F7
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Technology: Si
Unit Weight: 180 g
REACH - SVHC: Details
Configuration: Full Bridge
Pd - Power Dissipation: 350 W
Gate-Emitter Leakage Current: 500 nA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 3.2 V
Continuous Collector Current at 25 C: 65 A
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