IXYS MKI100-12F8 IGBT Modules 100 Amps 1200V
ManufacturerIXYS(View more products from this manufacturer)
ModelMKI100-12F8
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Width: 62 mm
Height: 17 mm
Length: 122 mm
Technology: Si
Unit Weight: 300 g
REACH - SVHC: Details
Configuration: Half Bridge
Pd - Power Dissipation: 640 W
Gate-Emitter Leakage Current: 600 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 3.3 V
Continuous Collector Current at 25 C: 125 A
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