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IXYS MIXA150W1200TEH IGBT Modules Six Pack SPT IGBT

ModelMIXA150W1200TEH
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Technology: Si

Configuration: 6-Pack

Mounting Style: Screw Mount

Pd - Power Dissipation: 695 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 220 A

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